Spectroscopic Investigation of Bandwidth Control Effects on the Mott-Hubbard State in Epitaxial RVO3 (R = La, Pr, Y) Thin Films | Synapse
April 10, 2026
Spectroscopic Investigation of Bandwidth Control Effects on the Mott-Hubbard State in Epitaxial RVO3 (R = La, Pr, Y) Thin Films
Key Points
This research aims to understand how bandwidth control affects the Mott-Hubbard state in epitaxial RVO3 thin films.
Performed spectroscopic investigation of RVO3 (R = La, Pr, Y) thin films.
Studied films grown on LaAlO3 substrates.
Analyzed electronic structure under various strain conditions.
Identified systematic changes in electronic structure according to R-site modifications.
Demonstrated influence of epitaxial strain on Mott-Hubbard characteristics.
Abstract
We investigate the systematic evolution of the electronic structure in epitaxially strained RVO3 (R = La, Pr, Y) thin films grown on LaAlO3 substrates, focusing on how materials modification (R-site...