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亮点:对GaN晶体的双粒相互磨削进行了分子动力学模拟。与仅一个方向或单粒磨削相比,双向相互作用的磨削距离在径向和横向方向上更好。粒子相互作用减小了力、摩擦系数、压力、损伤深度和磨耗。非晶、相变、位错、堆垛缺陷和晶格畸变主导了塑性损伤。
Li 等(周五)研究了这个问题。
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