What question did this study set out to answer?

The research aims to investigate the transition from an indirect to a direct bandgap in specific p-type semiconductors.

April 15, 2026Journal of Materials Chemistry C1 citations

Indirect-to direct bandgap transition in CsRESiS 4 (RE = Sc, Y, Lanthanides) through intrinsic charge-transfer-transitions (CTT) behaviour

SZSheng ZhangUniversity of Science and Technology Beijing PQPengxiang QiuNanjing University of Information Science and Technology SHShuxian HuUniversity of Science and Technology Beijing

Key Points

The research aims to investigate the transition from an indirect to a direct bandgap in specific p-type semiconductors.
Characterization of CsRESiS4 materials with varying RE elements.
Analysis of charge-transfer transitions in relation to bandgap properties.
Assessment of semiconductor performance in electronic applications.
Successful demonstration of an indirect-to-direct bandgap transition.
Enhanced performance metrics suggesting improved applications in electronics.
Identification of intrinsic charge-transfer transitions as a critical factor.

Abstract

The development of P-type semiconductors with high performance will drive the advancement of modern information electronics and largescale N-P complementary semiconductor technology. Herein, we demonstrate an indirect-to-direct bandgap transition of...

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