Breakdown Voltage Analysis in Quaternary InAlGaN High Electron Mobility Transistor of High-K Passivation Layer for High Power Applications

The 2-Dimensional breakdown characteristics analysis in InAlGaN/GaN high electron mobility transistors (HEMTs) is implemented through including of donor and acceptor atoms inside the barrier layer. Thereby dependences of the relative permittivity ε r and the thickness d of passivation layer on the breakdown voltage are related for the parametric analysis. When the relative permittivity ε r increases duly affects the breakdown voltage by order of increases, owing to its electric field existence at the drain, there on resulting in ε r upsurges. This occurs due to the properties of insulator with the applied voltage evenly drops uniformly. The inducing voltage drop alongside the heterostructure of materials InAlGaN/GaN develops flatter response on the drain terminal of the gate owing to its permittivity ε r of higher order. The aforementioned breakdown voltage surges, since of the electric field nearby the drain has weakened as a owing to it thickness of passivating layer d, this resolute InAlGaN/GaN HEMTs of a high-k along with the thicker passivation layer has higher breakdown voltage.