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April 1, 2021Journal of Computational and Theoretical Nanoscience

Breakdown Voltage Analysis in Quaternary InAlGaN High Electron Mobility Transistor of High-K Passivation Layer for High Power Applications

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NAN. AnbuselvanPAP. Anandan

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Anbuselvan et al. (2021) studied this question.

synapsesocial.com/papers/69df4203de200760a8614c63https://doi.org/10.1166/jctn.2021.9386
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  5. 5Enhancement of breakdown voltage in AlGaN/GaN high electron mobility transistors using a field plate2001 · 453 citations