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January 1, 2001IEEE Transactions on Electron Devices

Enhancement of breakdown voltage in AlGaN/GaN high electron mobility transistors using a field plate

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SKShreepad KarmalkarUMUmesh K. Mishra

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Karmalkar et al. (2001) studied this question.

synapsesocial.com/papers/6a9469f1732673be08c58319https://doi.org/10.1109/16.936500
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