The structural properties of ion‐implanted GaP:N are investigated using high‐resolution X‐ray diffraction as a function of nitrogen concentration and post‐implantation annealing. The nitrogen‐ion‐implanted samples exhibit lattice expansion with N composition due to the formation of N‐related complexes, mainly N–P split interstitials. This contrasts with the lattice contraction typically observed in epitaxially grown dilute nitride semiconductors. Post‐implantation annealing reduces the lattice expansion by releasing P from the N–P split interstitials and transforming them into N P substitutionals. These findings highlight the potential of ion implantation as an effective approach for realizing dilute nitride semiconductor‐based devices with improved lattice matching to the substrate.
Mamun-Or-Rashid et al. (Wed,) studied this question.
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