Aluminum scandium nitride (AlScN) emerges as a uniquely versatile material capable of monolithically integrating radiofrequency front‐ends, nonvolatile memory, and integrated photonics on silicon—key domains for 6G and edge AI. This perspective details AlScN's multifunctional properties: strong piezoelectricity for Ku‐band filters, robust ferroelectricity for memory and logic‐in‐memory, and a large electro‐optic coefficient for optical modulation. We analyze recent advances in cofabrication and propose strategies to stabilize high‐Sc phases via alloying and strain engineering. AlScN further enables emerging applications in quantum transduction and on‐chip energy harvesting. By bridging classical and quantum functionalities, AlScN is positioned as a foundational platform for next‐generation convergent systems, dramatically reducing power and footprint while enabling adaptive 6G networks, neuromorphic computing, and secure quantum interfaces.
Alberto Boretti (Tue,) studied this question.