What question did this study set out to answer?

This research aims to design and model a high-responsivity 3.2 THz detector using 28 nm CMOS technology.

May 8, 2026Open Access

High-Responsivity 3.2 THz Detector Design and TCAD Modeling in 28 nm CMOS Technology

Key Points

This research aims to design and model a high-responsivity 3.2 THz detector using 28 nm CMOS technology.
Fabrication of a 3.2 THz plasmonic wave detector in a standard 28 nm CMOS process
Incorporation of an integrated on-chip antenna and NMOS transistor design
Development of a response model using calibrated TCAD to evaluate performance
Achieved highest response voltage (Rv) of 830.1 V/W at a modulation frequency of 2 kHz
Obtained lowest noise equivalent power (NEP) of 63.1 pW/Hz1/2
Predicted results closely matched experimental measurements, confirming model effectiveness

Abstract

THz detectors based on CMOS technology have garnered widespread attention due to their potential in building compact, low-power, and scalable THz sensing and imaging systems. This paper proposes a 3.2 THz plasmonic wave detector fabricated in a standard 28 nm CMOS process, featuring an integrated on-chip antenna and NMOS transistor design. A response model was established, in which the NMOS input impedance at 3.2 THz extracted from the calibrated TCAD model was incorporated to evaluate the detector performance. At a modulation frequency of 2 kHz, the highest Rv of 830.1 V/W and the lowest NEP of 63.1 pW/Hz1/2 were obtained. The predicted results show good agreement with the experimental measurements, confirming the effectiveness of the TCAD-assisted response modeling approach. Furthermore, demonstration experiments such as concealed object detection and high-resolution biological sample imaging further confirm the practical value of this CMOS detector in compact THz sensing and imaging systems.

High-Responsivity 3.2 THz Detector Design and TCAD Modeling in 28 nm CMOS Technology

Key Points

Abstract

Cite This Study