High-Performance p-Type MOSFETs Based on Janus MoSTe for Sub-5 nm CMOS Scaling

Key Points

• The research aims to investigate the performance of p-type MOSFETs based on Janus transition metal dichalcogenides for advanced semiconductor applications.
• Evaluated performance characteristics of p-type MOSFETs using Janus MoSTe as the channel material.
• Compared results with existing n-type JTMD MOSFETs.
• Focused on the implications for CMOS technology scaling.
• Janus MoSTe exhibited superior electrical performance compared to traditional options.
• Achieved enhanced mobility and on/off ratio, indicating improved suitability for sub-5 nm technology.