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We have measured surface stresses on clean Si (111) 77 by comparing this surface to a reference surface on which gallium atoms are adsorbed under UHV conditions. Stresses are determined by optically measuring the macroscopic strain induced in thin samples. We find a surface stress of 2. 37 eV/ (11 cell) for Si (111) 77, and a stress in the range 0. 90--1. 09 eV/ (11 cell) for the Si (Ga) (111) superlattice associated with one monolayer Ga coverage. Comparison with theory suggests that our technique will be a powerful tool to measure equilibrium stresses in atomically clean surfaces.
Martinez et al. (1990) studied this question.