PulseExploreJournal ClubDebatesTrendingResearchersJournals
Instagram
HomeExploreJournal ClubTrending
Synapse
⌘+K
Synapse
June 21, 1990Electronics Letters31 citations

636 nm room temperature CW operation by heterobarrier blocking structure InGaAlP laser diodes

View Full Paper
KIKazuhiko ItayaMIMasayuki IshikawaYUYuki Uematsu

Key Points

  • This research aims to achieve continuous wave operation at room temperature for InGaAlP laser diodes.
  • Fabrication of heterobarrier blocking structure using two-step metal-organic chemical vapour deposition.
  • Measurement of threshold current at 20°C and continuous wave operation at various temperatures.
  • Threshold current recorded at 102 mA at 20°C.
  • Achieved continuous wave operation of 3 mW up to 48°C.

Abstract

636 nm room temperature CW operation has been achieved by heterobarrier blocking structure InGaAlP laser diodes with a quaternary active layer. This structure was fabricated by two-step metal-organic chemical vapour deposition. The threshold current was 102 mA at 20°C and CW operation of 3mW was attained at up to 48°C.

Ask AI
Helpful
Bookmark
Share
View Full Paper

Cite This Study

Itaya et al. (1990) studied this question.

synapsesocial.com/papers/6a16c6dd2fcf950e000547afhttps://doi.org/10.1049/el:19900550
Ask AI
Helpful
Bookmark
Share
View Full Paper