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November 1, 1984Applied Physics Letters36 citations

Yellow-emitting AlGaInP double heterostructure laser diode at 77 K grown by atmospheric metalorganic chemical vapor deposition

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MIMasao IkedaMHMasumi HondaYMYukie Mori

Key Points

  • To fabricate and achieve yellow-emitting pulsed laser operation from an AlGaInP double heterostructure diode grown by atmospheric metalorganic chemical vapor deposition.
  • Grew an Al0.37Ga0.15In0.48P/Al0.16Ga0.36In0.48P/Al0.37Ga0.15In0.48P double heterostructure wafer by conventional metalorganic chemical vapor deposition using triethyl metals and phosphine source materials.
  • Fabricated a diode with a silicon nitride (Si3N4) insulated stripe geometry measuring 8 μm in width and 250 μm in length.
  • Tested the device under pulsed laser operation conditions at a temperature of 77 K.
  • Achieved yellow-emitting pulsed laser operation with an emission wavelength of 579 nm at 77 K.
  • Recorded a threshold current density of 5.6 kA/cm² for the 8-μm-wide and 250-μm-long stripe geometry device.

Abstract

Yellow-emitting pulsed laser operation of an Al0.37Ga0.15In0.48P/Al0.16Ga0.36In0.48P/ Al0.37Ga0.15In0.48P double heterostructure laser diode was obtained at 77 K. The emission wavelength was 579 nm. The threshold current density was 5.6 kA/cm2 for a diode with a Si3N4 insulated 8-μm-wide and 250-μm-long stripe geometry. The device was made from a DH wafer grown by conventional metalorganic chemical vapor deposition using triethyl metals and phosphine as source materials.

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Cite This Study

Ikeda et al. (1984) studied this question.

synapsesocial.com/papers/6a16c71966334ab13b054e24https://doi.org/10.1063/1.95459
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