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May 29, 2026Materials Research Bulletin0 citationsOpen Access

Ba0.7Sr0.3TiO3 thin films growth on R-plane sapphire substrates: Influence of various buffer layers on their structural and dielectric properties at microwaves

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MLM. LebarbéECE. ChaslinQSQ. Simon

Key Points

  • This research aims to investigate how different buffer layers affect the growth and properties of Ba0.7Sr0.3TiO3 thin films on sapphire substrates.
  • Utilized RF-sputtering techniques to grow buffer layers including CeO2, MgO, MgAl2O4, and MgO/CeO2.
  • Achieved high quality epitaxial growth of (001) Ba0.7Sr0.3TiO3 on (001) MgO buffer layer.
  • Evaluated the dielectric properties of the BST films at microwave frequencies.
  • The (001) Ba0.7Sr0.3TiO3 films showed optimal growth and properties with the MgO buffer layer.
  • Dielectric properties of the BST films were significantly improved at microwaves when utilizing the MgO buffer layer.

Abstract

• Buffer layers for BST thin films growth on R-plane sapphire substrates. • RF-sputtering of buffer layers: CeO 2 , MgO, MgAl 2 O 4 , and MgO/CeO 2 . • High quality epitaxial growth of (001)BST film on (001)MgO buffer layer. • Improved BST film dielectric properties at microwaves with MgO buffer layer.

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Cite This Study

Lebarbé et al. (2026) studied this question.

synapsesocial.com/papers/6a192f1bfab5b468c4418703https://doi.org/10.1016/j.materresbull.2026.114245
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