Ba0.7Sr0.3TiO3 thin films growth on R-plane sapphire substrates: Influence of various buffer layers on their structural and dielectric properties at microwaves

Key Points

• This research aims to investigate how different buffer layers affect the growth and properties of Ba0.7Sr0.3TiO3 thin films on sapphire substrates.
• Utilized RF-sputtering techniques to grow buffer layers including CeO2, MgO, MgAl2O4, and MgO/CeO2.
• Achieved high quality epitaxial growth of (001) Ba0.7Sr0.3TiO3 on (001) MgO buffer layer.
• Evaluated the dielectric properties of the BST films at microwave frequencies.
• The (001) Ba0.7Sr0.3TiO3 films showed optimal growth and properties with the MgO buffer layer.
• Dielectric properties of the BST films were significantly improved at microwaves when utilizing the MgO buffer layer.