ABSTRACT This work develops a compact model for p ‐type field‐effect transistors (FETs) based on two‐dimensional indium selenide operating in the ballistic regime. The model explicitly captures the non‐parabolic valence‐band dispersion, represented by a fourth‐order polynomial that reproduces its ring‐shaped (or ‘Mexican‐hat’) topology. From this dispersion, closed‐form expressions are derived for the hole effective mass, density of states and hole concentration, which are then used to formulate the ballistic current using the Landauer formalism and the quantum capacitance. The resulting formulation is fully analytical, physics‐based and supports intrinsic compact‐model benchmarking. The formulation is evaluated using representative monolayer and few‐layer InSe band‐structure parameters reported from ab initio calculations and experimental studies to assess intrinsic performance trends. Finally, a symmetric n ‐FET/ p ‐FET benchmark provides qualitative insight into the intrinsic transport asymmetry relevant to future InSe‐based complementary metal‐oxide‐semiconductor technologies.
Souza et al. (Thu,) studied this question.