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In this paper, the novel architecture of a dual-input and digitally driven Doherty amplifier is proposed with the aim of improving the performance of gallium-nitride (GaN) Doherty transmitters. In this work, the power efficiency is enhanced by using digital adaptive phase alignment to compensate for performance degradation due to bias and power-dependant phase misalignment between the carrier and peaking branches. For experimental validation, the proposed dual-input digital Doherty power amplifier (PA) was implemented using a 10-W GaN transistor. Measurement results demonstrate that the dual-input Doherty prototype exhibited a power-added efficiency (PAE) higher than 50% over an 8-dB output power back-off (OPBO) range. In comparison with the conventional fully analog Doherty PA, this represents a 10% improvement in PAE over the same OPBO range. Using a one-carrier Worldwide Interoperability for Microwave Access signal with a 7-dB peak-to-average power ratio, the dual-input Doherty PA, with digital adaptive phase alignment applied at the input of its peaking path, achieved a PAE of 57% at an average output power of 37.8 dBm, along with a - 22-dBc adjacent channel power ratio (ACPR). This corresponds to an improvement of 7% in PAE and 1 dB in average output power for the same ACPR level in comparison with a conventional fully analog Doherty PA.
Darraji et al. (Fri,) studied this question.