Key points are not available for this paper at this time.
为了可靠操作,STT-MRAM 存储阵列的单个单元必须满足其性能的特定要求。在这项工作中,我们回顾了这些要求,并讨论了 STT-MRAM 操作的基本物理原理,涵盖了从器件级别到芯片阵列性能的范围,以及其开发方法。
Khvalkovskiy 等人(星期五)研究了这个问题。
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