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We measure the tunneling conductance (G) and current-voltage (I-V) characteristics for electron tunneling from a bulk doped-GaAs normal metal into the abrupt edge of a fractional quantum Hall effect. We observe clear power law behavior for both the I-V relationship and the conductance versus temperature. For tunneling into the 0ex{0ex}=0ex{0ex}1/3 edge the power law persists for one decade in V (T), and 2. 7 (1. 7) decades in I (G). This strongly indicates the 1/3 edge behaves like a chiral Luttinger liquid. In contrast, the 0ex{0ex}=0ex{0ex}1 edge is essentially linear, while the 2/3 edge is slightly nonlinear.
Chang et al. (1996) studied this question.