Graphene‐Contacted Ultrashort Channel Monolayer MoS2 Transistors

2D semiconductors are promising channel materials for field‐effect transistors (FETs) with potentially strong immunity to short‐channel effects (SCEs). In this paper, a grain boundary widening technique is developed to fabricate graphene electrodes for contacting monolayer MoS 2 . FETs with channel lengths scaling down to ≈4 nm can be realized reliably. These graphene‐contacted ultrashort channel MoS 2 FETs exhibit superior performances including the nearly Ohmic contacts and excellent immunity to SCEs. This work provides a facile route toward the fabrication of various 2D material‐based devices for ultrascaled electronics.