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Abstract Homoepitaxial single-crystal beta gallium oxide (β-Ga 2 O 3 ) films were fabricated by the mist chemical vapor deposition method. The crystallinity of the films grown markedly depended on growth temperature, and the optimum growth temperatures were found to be 700–800 °C. Using unintentionally doped β-Ga 2 O 3 films grown on Sn-doped β-Ga 2 O 3 (010) substrates, the fabrication of Schottky barrier diodes was demonstrated. Furthermore, we fabricated electrically conductive Sn-doped β-Ga 2 O 3 films on semi-insulating Fe-doped β-Ga 2 O 3 (010) substrates. The carrier concentrations were between 1 × 10 18 and 5 × 10 20 cm −3 . The Hall mobility was 45 cm 2 V −1 s −1 at the carrier concentration of 1 × 10 18 cm −3 .
Lee et al. (Mon,) studied this question.