Investigation of AlGaN/GaN high electron mobility transistor structures on 200-mm silicon (111) substrates employing different buffer layer configurations

Abstract AlGaN/GaN high electron mobility transistor (HEMT) structures are grown on 200-mm diameter Si (111) substrates by using three different buffer layer configurations: (a) Thick-GaN/3 × Al x Ga 1−x N/AlN, (b) Thin-GaN/3 × Al x Ga 1−x N/AlN, and (c) Thin-GaN/AlN, so as to have crack-free and low-bow (1800 cm 2 /V∙s) and 2DEG carrier concentration (>1. 0 × 10 13 cm −2) on Si (111) substrates.