I G- and V GS-Dependent Dynamic R ON Characterization of Commercial High-Voltage p-GaN Gate Power HEMTs

The dynamic on-resistance ( r ON ) of two mainstream 600 V/650 V p -GaN gate power high-electron-mobility transistors (HEMTs) with Ohmic- and Schottky-type p -GaN gate contacts are characterized under the hard-switching condition and show strong dependences on the gate driving conditions under both double-pulse and multipulse testing modes. The statistical measurement of multiple samples indicates this is a representative phenomenon in these two types of commercial p -GaN gate power HEMTs. For Ohmic-type p -GaN gate HEMT, gate injection current ( I G ) at the on state from the p -GaN gate facilitates a faster detrapping process and contributes to a smaller dynamic r ON . For Schottky-type p -GaN gate HEMT, the dynamic r ON shows a strong dependence on the gate overdrive voltage ( V GS ) because the higher V GS can compensate the increase in dynamic r ON induced by the positively shifted V TH under high drain bias. A larger I G (from 1.2 to 22 mA) and higher V GS (from 5 to 7 V) play the most important role in suppressing the dynamic r ON under high switching frequency and high drain bias condition (i.e., 400 kHz/400 V), where the reduction of dynamic r ON is 13.6% and 17.1% for Ohmic-type and Schottky-type p -GaN gate HEMTs, respectively.