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Advancements in scaling gate insulators for MOS transistors permit low-voltage, silicon-oxide-nitride-silicon (SONOS) nonvolatile semiconductor memories (NVSMs) for a wide range of applications. The continued scaling of SONOS devices offers improved performance with a small cell size, single-level polysilicon with low voltage, fast erase/write, improved memory retention, increased endurance, and radiation hardness. In this article, we discuss scaled SONOS devices, SONOS memory technology, and some SONOS NVSM applications.
White et al. (Sat,) studied this question.