High‐Density, Crosstalk‐Free, Flexible Electrolyte‐Gated Synaptic Transistors Array via All‐Photolithography for Multimodal Neuromorphic Computing

Abstract High‐density bio‐electrolyte‐gated synaptic transistors (BEGTs) array are promising for constructing neuromorphic computing architectures. Due to the bulk ion conductivity and the crack sensitivity of the electrolyte film, patterning the electrolyte is an indispensable route to prevent spatial crosstalk and improve the flexibility of the device array. However, the susceptibility of bio‐electrolyte to organic solvents poses challenges in developing reliable all‐photolithography techniques for fabricating scalable, patterned, and high‐density BEGTs array. This study introduces an all‐photolithography method that adopts a photo‐crosslinker‐enabled electrolyte to create a high‐density (11846 devices per cm 2 ) multimodal BEGTs array. This array demonstrates essential neuromorphic behaviors without inter‐device crosstalk and maintains its flexibility, enduring 200 bending cycles at a 6 mm radius without significant performance degradation. Meanwhile, the BEGTs array exhibits multimodal synaptic behavior, not only successfully mimicking the biological visual memory system for sensing and processing images but also proving highly accurate in classifying handwritten digits, making it suitable for constructing neuromorphic computing systems. This work offers a dependable strategy for the scalable and stable fabrication of BEGTs array, providing valuable insights for advancing artificial neuromorphic systems.