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我们报道了一种简便且可扩展的化学气相沉积(CVD)方法,以 VCl 3 和钒箔为双钒源,CH 4 为碳源,用于合成高质量、纯相的 V 2 C 纳米片。
Ding et al. (Tue,) 对这一问题进行了研究。
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