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Abstract The article commences with a review focusing on three critical aspects of the perovskite/Si tandem technology: the evolution of efficiencies to date, comparisons of Si subcell choices, and the interconnection design strategies. Building on this review, a clear route is provided for minimizing optical losses aided by optical simulations of a recently reported high‐efficiency perovskite/Si tandem system, optimizations which result in tandem current densities of ≈20 mAcm −2 with front‐side texture. The primary focus is on electrical modeling on the Si‐subcell, in order to understand the efficiency potential of this cell under filtered light in a tandem configuration. The possibility of increasing the Si subcell efficiency by 1% absolute is offered through joint improvements to the bulk lifetime, which exceeds 4 ms, and improves surface passivation quality to saturation current densities below 10 fA cm −2 . Polycrystalline‐Si/SiO x passivating contacts are proposed as a promising alternative to partial‐area rear contacts, with the potential for further simplifying cell fabrication and improving device performance. A combination of optical modeling of the complete tandem structure alongside electrical modeling of the Si‐subcell, both with state‐of‐the‐art modeling tools, provides the first complete picture of the practical efficiency potential of perovskite/Si tandems.
Shen et al. (Tue,) studied this question.