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A quantum-well wire was fabricated with use of local intermixing of a GaAs-AlₗGa₁-ₗAs single-quantum-well epitaxial layer induced by Ga focused-ion-beam implantation. Fine structures were observed in low temperature photoluminescence and photoluminescence excitation spectra. These fine structures are explained by the density of states specific to the two-dimensionally confined carrier system.
Hirayama et al. (1988) studied this question.