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3μm GaInAsP/InP buried heterostructure lasers were successfully fabricated by using a hybrid combination of liquid phase epitaxy (LPE) and metalorganic chemical vapor deposition (MO-CVD). Definite advantages were found in the use of MO-CVD for the overgrowth of the optical and current confining layers. Excellent optical linearity up to two times the threshold current, as well as low-threshold current (57 mA), were obtained during cw operation at room temperature. A single longitudinal mode was observed at ∼1.11 times the threshold current.
Ng et al. (1981) studied this question.
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