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Abstract Electronic properties of selected quantum dot (QD) systems are surveyed based on the multi-band k·p method, which we benchmark by direct comparison to the empirical tight-binding algorithm, and we also discuss the newly developed “linear combination of quantum dot orbitals” method. Furthermore, we focus on two major complexes: First, the role of antimony incorporation in InGaAs/GaAs submonolayer QDs and In 1− x Ga x As y Sb 1− y /GaP QDs, and second, the theory of QD-based quantum cascade lasers and the related prospect of room temperature lasing.
Mittelstädt et al. (Mon,) studied this question.