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Along with the increasing maturity for the material and process of the wide bandgap semiconductor silicon carbide (SiC), the insulated gate bipolar transistor (IGBT) representing the top level of power devices could be fabricated by SiC successfully. This article presents a thorough review of development of SiC IGBT in the past 30 years. The progresses of models, structure design, and performance in SiC IGBT are summarized. The challenges resulting from fabrication process and switching characteristics are discussed and analyzed in detail. The experimental results and existing problems in SiC IGBT-based applications are summarized in the end.
Han et al. (Tue,) studied this question.