The electronic structures of β-phase (AlxGa1-x)2O3 studied by DFT calculations
Key Points
This research aims to investigate the electronic structures of β-phase (AlxGa1-x)2O3 for applications in power electronics.
Conducted density functional theory (DFT) calculations on β-phase (AlxGa1-x)2O3
Analyzed band gap variations due to alloying Al2O3 and Ga2O3
Assessed potential applications in power electronics and transistors
Findings indicate an expanded accessible bandgap through alloying with aluminum
Demonstrated improvements in electronic performance for power applications
Identified composition-dependent characteristics that enhance high electron mobility
Abstract
Band gap engineering by alloying Ga2O3 with Al2O3 can expand the accessible bandgap for power electronics and high electron mobility transistor. For such applications, it is important to known the...