We report on the study of high-field performance of Si-doped n-AlN layers that were grown using a pulsed metalorganic chemical vapor deposition (PMOCVD) process. In the past we showed this pulsed doping approach to lead to doping efficiency superior to that in the conventional MOCVD process. Here using them as the drift layer for a quasi-vertical conduction Schottky barrier, we show their ability to withstand high reverse bias voltages and sustain an electrical field as high as 9.9 MV cm−1. Our study thus demonstrates the viability of the PMOCVD growth and doping approach to yield n-AlN layers suitable for high current-high voltage devices.
Mazumder et al. (Tue,) studied this question.