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Plasma resistance and etching behavior of APS Y2O3 coatings modified via NH4F immersion process | Synapse
March 3, 2026
Plasma resistance and etching behavior of APS Y2O3 coatings modified via NH4F immersion process
JC
Jiwon Choi
DK
Daegeun Kim
HS
Hyewon Seok
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Key Points
Improved plasma resistance was observed in APS Y2O3 coatings modified via NH4F immersion, enhancing their durability.
Quantitative analysis indicated a significant increase in resistance, outperforming unmodified coatings by over 30%.
The approach involved a systematic assessment of etching behavior influenced by NH4F immersion on Y2O3 coatings.
These findings highlight the potential for NH4F immersion to enhance durability in plasma environments, needing further exploration.
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Choi et al. (Fri,) studied this question.
synapsesocial.com/papers/69a768b3badf0bb9e87e5a44
https://doi.org/https://doi.org/10.1016/j.matchemphys.2026.132200