Revealing and engineering contact-origin noise in ultrathin tellurium transistors | Synapse
March 15, 2026Open Access
Revealing and engineering contact-origin noise in ultrathin tellurium transistors
Key Points
To identify and suppress excess low-current noise in ultrathin tellurium transistors.
Identified the origin of noise in ultrathin tellurium field-effect transistors (FETs).
Modulated the tellurium thickness near the contacts to suppress noise.
Successfully suppressed excess low-current noise in tellurium transistors.
Improved transistor performance by engineering the contact region.
Abstract
This study identifies the origin of excess low-current noise in ultrathin Te FETs and suppresses it by locally modulating the Te thickness near the contacts.