Identifies contact-origin noise in tellurium transistors, suggesting techniques to suppress low-current noise.
This study identifies the origin of excess low-current noise in ultrathin Te FETs and suppresses it by locally modulating the Te thickness near the contacts.
No takes yet. Share an insight, caveat, or question.
Lee et al. (2026) studied this question.
Synapse has enriched 5 closely related papers on similar clinical questions. Consider them for comparative context: