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Resistive switching memory (RRAM) is among the most promising technologies for storage class memory (SCM) and embedded nonvolatile memory (eNVM). Feasibility of RRAM as SCM and/or embedded memory requires large on/off ratio, good endurance, high retention, and the availability of a robust select element for crossbar array integration. This work presents Ti/SiO x RRAM with high on/off ratio (>10 4 ), good endurance (>10 7 ), high uniformity and strong retention (260°C for 1 hour), thanks to the high SiO x band gap. Ag/SiO x devices show volatile switching with high on/off ratio (> 10 7 ) and bidirectional operation applicable to select devices in crossbar arrays.
Bricalli et al. (Thu,) studied this question.
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