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We report a 3-D-stackable 1S1R passive cross-point resistive random access memory (RRAM). The sneak (leakage) current challenge in the cross-point RRAM integration has been overcome utilizing a field-assisted superlinear threshold selector. The selector offers high selectivity of >10 7 , sharp switching slope of 10 11 . Furthermore, we demonstrate 1S1R integration in which the selector-subthreshold current is 10 2 memory ON/OFF ratio and >10 6 selectivity during cycling. Combined with self-current-controlled RRAM, the 1S1R enables high-density and high-performance memory applications.
Jo et al. (Fri,) studied this question.