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Highly reliable TaO x ReRAM has been successfully demonstrated. The memory cell shows stable pulse switching with endurance over 10 9 cycles, sufficient retention exceeding 10 years at 85degC. TaO x exhibits stable high and low resistance states based on the redox reaction mechanism, confirmed by HX-PES directly for the first time. An 8 kbit 1T1R memory array with a good operating window has been fabricated using the standard 0.18 mum CMOS process.
Wei et al. (Mon,) studied this question.
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