What question did this study set out to answer?

To establish room-temperature continuous operation of AlxGa1−xAs-GaAs quantum-well lasers using photopumping.

July 1, 1978

Room-temperature continuous operation of photopumped MO-CVD AlxGa1−xAs-GaAs-AlxGa1−xAs quantum-well lasers

Key Points

To establish room-temperature continuous operation of AlxGa1−xAs-GaAs quantum-well lasers using photopumping.
Quantum-well heterostructures grown by metalorganic chemical vapor deposition (MO-CVD).
Lasers tested at room temperature (300 °K) and embedded in Cu under diamond windows.
Use of undoped or compensated GaAs active layers with specific carrier concentrations.
Demonstrated continuous operation of the quantum-well lasers at room temperature.
The lasers exhibit undoped or compensated active layers, showing operational viability in standard conditions.
Reported active layer thicknesses of approximately 200 Å.

Abstract

Room-temperature continuous operation (cw, 300 °K) of photopumped AlxGa1−xAs-GaAs-AlxGa1−xAs quantum-well heterostructure lasers embedded in Cu under diamond windows is demonstrated. The quantum-well heterostructures are grown by metalorganic chemical vapor deposition (MO-CVD) and possess undoped (nd−na≲1015/cm3) or compensated (nZn∼1019/cm3, nSe∼8×1018/cm3) GaAs active layers of thickness Lz∼200 Å.

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Cite This Study

Holonyak et al. (Sat,) studied this question.

synapsesocial.com/papers/6a0e6842ee79da3955042ed7 https://doi.org/https://doi.org/10.1063/1.90150

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