January 1, 2023

Two-dimensional layered Dion–Jacobson phase organic–inorganic tin iodide perovskite field-effect transistors

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Abstract

The single BDA 2+ layer in D–J BDASnI 4 eliminates the van der Waals gap in R–P perovskites, enhancing the out-of-plane charge transport and structural stability. Polymer-gated BDASnI 4 FETs show improved performance and environmental stability.

Two-dimensional layered Dion–Jacobson phase organic–inorganic tin iodide perovskite field-effect transistors

Key Points

Abstract

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