January 1, 2023

Two-dimensional layered Dion–Jacobson phase organic–inorganic tin iodide perovskite field-effect transistors

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Abstract

The single BDA 2+ layer in D–J BDASnI 4 eliminates the van der Waals gap in R–P perovskites, enhancing the out-of-plane charge transport and structural stability. Polymer-gated BDASnI 4 FETs show improved performance and environmental stability.

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Authors

Hongyu Ji

Harbin Medical University

Xin Liu

Harbin University of Science and Technology

Longtao Li

Shandong University of Science and Technology

Journals

Journal of Materials Chemistry A

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Institutions

Beijing Jiaotong University

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Two-dimensional layered Dion–Jacobson phase organic–inorganic tin iodide perovskite field-effect transistors

Key Points

Abstract

Citation Network

Connected Papers

Discussion

Authors

Journals

Actions

Institutions

References and Citations

Citation Network

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Discussion

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