The thermal stability and structural evolution of a GaN high-electron-mobility transistor (HEMT) heterostructure grown on a Si (111) substrate were investigated using in situ high-temperature X-ray diffraction (HT-XRD), reciprocal space mapping (RSM), Raman spectroscopy, and rocking-curve (RC) analysis at varying temperatures. The heterostructure, consisting of a p-GaN cap, an AlGaN barrier, and a GaN channel supported by two AlGaN/AlGaN superlattice (SL) buffer layers, maintained clear and periodic satellite peaks up to a temperature of 1000 deg C, confirming excellent structural integrity. Symmetric and asymmetric RSM results reveal that both the Si and GaN diffraction peaks shift to lower angles with increasing temperature, consistent with thermal expansion, and show no significant broadening or relaxation throughout the heating process. The c-lattice constant follows the theoretical expansion predicted by the multi-frequency Einstein model, whereas the a-lattice expansion is slower due to in-plane strain constraints imposed by the underlying Si substrate and buffer layers. Rapid lattice contraction during the fast-cooling stage induces a residual compressive strain of approximately 0.3 percent in the GaN channel after cooling. Raman spectra further confirm this strain state through a blue shift of approximately 1.5 cm-1 of the GaN E2 (high) phonon mode, corresponding to an in-plane strain of about 0.2 percent. Rocking-curve analysis reveals an increase in both screw and edge dislocation densities by 28 percent and 12 percent, respectively. These results collectively demonstrate that the GaN HEMT heterostructure exhibits robust crystalline stability up to 1000 deg C, with only minor strain redistribution and limited dislocation activity, providing experimental evidence for GaN device applications under high-temperature conditions.
Li et al. (Thu,) studied this question.