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December 22, 2025Open Access

In situ XRD Study of Strain Evolution in AlGaN/GaN HEMT at High Temperatures up to 1000 °C

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Authors

BLBotong LiNorth China Electric Power UniversityBDBobby G. DuerschUniversity of UtahHEHunter D. EllisUniversity of Utah

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Implication

In situ study shows thermal stability and strain in GaN HEMT up to 1000°C, indicating robust crystalline integrity.

Key Points

  • To investigate the thermal stability and structural evolution of GaN HEMT heterostructure at high temperatures.
  • Used in situ high-temperature X-ray diffraction (HT-XRD) for analysis.
  • Applied Raman spectroscopy for strain measurement.
  • Conducted rocking-curve analysis to assess dislocation densities.
  • GaN HEMT maintains clarity in satellite peaks up to 1000°C.
  • Observed a compressive strain of approximately 0.3% in GaN channel after cooling.
  • Dislocation densities increased by 28% (screw) and 12% (edge) under high temperature conditions.

Cite This Study

Li et al. (2025) studied this question.

synapsesocial.com/papers/69488bc877063b71e748cfb4https://doi.org/10.48550/arxiv.2512.16172
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Also Consider

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  1. 1In situ XRD study of strain evolution in AlGaN/GaN HEMT at high temperatures up to 1000 °C2026
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