What does this research mean for the field?

The study successfully realizes 4-inch diameter and thick β-Ga2O3 single crystals using the Vertical Bridgman method. Novelty: ClaimNovelty.METHODOLOGICAL. Consensus alignment: ConsensusAlignment.NEUTRAL.

What question did this study set out to answer?

The aim is to grow large diameter β-Ga2O3 single crystals for use in electronic devices.

February 19, 2026

Realization of 4-Inch and Thick β-Ga2O3 Single Crystals Using the Vertical Bridgman Method

Key Points

The aim is to grow large diameter β-Ga2O3 single crystals for use in electronic devices.
Utilized the vertical Bridgman method for crystal growth
Focused on producing 4-inch diameter crystals
Controlled cooling rates and temperature gradients during growth
Successfully produced thick β-Ga2O3 single crystals
Achieved high-quality orientations
Demonstrated potential for application in power and optoelectronic devices

Abstract

Gallium oxide (β-Ga2O3) is an ultra-wide-bandgap semiconductor with properties promising for next-generation power and optoelectronic devices. Here, a 4-inch diameter (100) oriented β-Ga2O3 bulk single crystal with a thickness of...

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