Realization of 4-Inch and Thick β-Ga2O3 Single Crystals Using the Vertical Bridgman Method

Q: What does this research mean for the field?

The study successfully realizes 4-inch diameter and thick β-Ga2O3 single crystals using the Vertical Bridgman method. Novelty: ClaimNovelty.METHODOLOGICAL. Consensus alignment: ConsensusAlignment.NEUTRAL.

Xiaona Du; Ning Jia; Haotian Huang; Ziqian Xu; Yongqiang Jin; Ziming Wang; Bowen Jiang; Mingyan Pan; Hongji Qi

doi:10.1039/d5ce01023c

January 1, 2026CrystEngComm

Realization of 4-Inch and Thick β-Ga2O3 Single Crystals Using the Vertical Bridgman Method

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Key Points

The aim is to grow large diameter β-Ga2O3 single crystals for use in electronic devices.
Utilized the vertical Bridgman method for crystal growth
Focused on producing 4-inch diameter crystals
Controlled cooling rates and temperature gradients during growth
Successfully produced thick β-Ga2O3 single crystals
Achieved high-quality orientations
Demonstrated potential for application in power and optoelectronic devices

Implication

This research demonstrates the growth of β-Ga2O3 crystals, indicating potential for advanced electronic applications.

Abstract

Gallium oxide (β-Ga2O3) is an ultra-wide-bandgap semiconductor with properties promising for next-generation power and optoelectronic devices. Here, a 4-inch diameter (100) oriented β-Ga2O3 bulk single crystal with a thickness of...

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Cite This Study

Du et al. (2026) studied this question.

synapsesocial.com/papers/6996a7ffecb39a600b3ee3b9 https://doi.org/10.1039/d5ce01023c

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Realization of 4-Inch and Thick β-Ga2O3 Single Crystals Using the Vertical Bridgman Method

Key Points

Implication

Abstract

Discussion

Cite This Study

Realization of 4-Inch and Thick β-Ga2O3 Single Crystals Using the Vertical Bridgman Method

Key Points

Implication

Abstract

Discussion

Cite This Study

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