Development of β-Ga₂O₃ power devices has been accelerating over the past few years. In particular, 4-inch device-quality β-Ga₂O₃ epi wafers have become commercially available, and low-loss trench MOS-type SBDs, and normally-off MOSFETs have been demonstrated. In this paper, we will explain recent progress in crystal growth techniques for β-Ga₂O₃ and power devices based on this material.
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Sasaki et al. (2024) studied this question.
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