Gallium oxide (Ga 2 O 3 ) is an emerging wide-bandgap semiconductor for high-power, low-loss transistors and diodes by virtue of its excellent material properties and suitability for mass production. In this paper, we begin by discussing the material properties of Ga 2 O 3 that make it an attractive alternative to not only Si but also other wide-bandgap materials such as SiC and GaN. State-of-the-art Ga 2 O 3 -based devices that have been fabricated to date demonstrate the performance potential for power electronics applications.
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Higashiwaki et al. (2016) studied this question.