State-of-the-art technologies of gallium oxide power devices

Gallium oxide (Ga 2 O 3 ) has gained increased attention for power devices due to its superior material properties and the availability of economical device-quality native substrates. This review illustrates recent advances in Ga 2 O 3 device technologies, beginning with an overview of the social circumstances that motivate the development of new-generation switching devices. Following an introduction to the material properties of Ga 2 O 3 from the viewpoint of power electronics, growth technologies of Ga 2 O 3 bulk single crystals and epitaxial thin films are discussed. The fabrication and performance of state-of-the-art Ga 2 O 3 transistors and diodes are then described. We conclude by identifying the directions and challenges of Ga 2 O 3 power device development in the near future.