Step-by-Step Shouldering Growth of (100) β-Ga ₂ O ₃ with Large Thickness

β-Ga2O3 crystals are anisotropic, which is also reflected in their growth habits. This is manifested in the occurrence of phenomena such as miscellaneous crystals and twin crystals due to the competition between different crystal planes, which affects the growth of large sizes. However, this anisotropic growth is not all a drawback; instead, it can be utilized to achieve the growth of specific crystal planes. In this article, by analyzing the growth dynamics mechanism of different crystal planes of β-Ga2O3, we qualitatively determined the suitable growth intervals for different crystal planes, and actively designed the thermal field and growth process that meet the requirements, successfully achieving the expected results. We conducted phased control over the shoulder expansion of (100) plane, obtaining high-quality β-Ga2O3 single crystals.